Transistor operation where an applied gate voltage turns the device on and then determines the drain saturation current.
The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions. Multiphysics effects can often have important influences on semiconductor device performance. Semiconductor processing frequently occurs at high temperatures and consequently stresses can be introduced into the materials. Furthermore, high-power devices can generate a significant amount of heat. The Semiconductor Module enables semiconductor device-level modeling on the COMSOL platform, allowing you to easily create customized simulations involving multiple physical effects. Moreover, the software is uniquely transparent, as you are always able to manipulate the model equations, leaving you with complete freedom in the definition of physics that are not predefined in the module.